NPN PNP S9014 Transistor Circuit Protection ESDS312DBVR For Amplifier

Features for the ESDS312

• IEC 61000-4-2 Level 4 ESD Protection
  • ±30-kV Contact Discharge
  • ±30-kV Air Gap Discharge
• IEC 61000-4-4 EFT Protection
  • 80 A (5/50 ns)
• IEC 61000-4-5 Surge Protection
  • 25 A (8/20 µs)
  • Low Surge Clamping Voltage 6.5 V at 25 AIpp
• IO Capacitance:
  • 4.5 pF(Typical)
• DC Breakdown Voltage: 5.5 V (Minimum)
• Ultra Low Leakage Current: 5 nA (Typical)
• Supports High Speed Interfaces up to 5 Gbps
• Industrial Temperature Range: –40°C to +125°C
• Easy Flow-Through Routing Package (ESDS312)

Description for the ESDS312

The ESDS314, ESDS312 devices are unidirectional TVS ESD protection diode array forEthernet, USB and general purpose data line surge protection up to 25 A (8/20 µs) . The ESDS314,ESDS312 devices are rated to dissipate ESD strikes at the maximum level specified in the IEC61000-4-2 international standard (Level 4).

The devices features a 4.5-pF IO capacitance per channel making it ideal for protectinghigh-speed interfaces such as Ethernet 10/100/1000, USB 2.0 and GPIO. The low dynamic resistanceand low clamping voltage ensure system level protection against transient events.

The ESDS314, ESDS312 devices are offered in the industry standard 5-Pin SOT23 packages.